A research team from Fudan University has developed the world’s first full-featured, 2D flash chip enabled by system integration, marking a major milestone in 2D electronic devices. This breakthrough integrates an ultrafast 2D flash memory device with mature silicon-based Complementary Metal-Oxide-Semiconductor (CMOS) technology. The new chip’s operation speed surpasses current flash memory technology and achieved a high memory cell yield, providing a path to accelerate the transition of next-generation devices from research to large-scale application. This development demonstrates a successful model for integrating new 2D materials, which feature high electron mobility and flexibility, into the industry’s standard CMOS platform.
Source: People’s Daily Online (2025) Link: https://en.people.cn/n3/2025/1011/c90000-20375424.html
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